MBE Sources
Vital Materials supplies a comprehensive range of high-purity metals and compounds engineered for Molecular Beam Epitaxy (MBE) and bulk crystal growth. Our MBE sources meet stringent purity and stability requirements for compound semiconductor and photonics applications. With vertically integrated refining and purification capabilities, we deliver +5N grade metals and compounds used for epitaxial growth, vacuum coating, thermal evaporation, and bulk crystal growth.
Vital Materials supports advanced MBE manufacturing for GaAs, InP, InSb, GaSb, CdTe, and CdZnTe systems, providing both standard source materials and customized configurations for research and production environments.
Key Products
Aluminum (Al)
Purity
- 99.99999% (7N)
Applications
- Aluminum nitride compounding, wide III-V bandgap barrier for optoelectronics, p-type dopant for silicon.
Features
- Stable evaporation behavior under UHV conditions
- Available as rods and ingots
Arsenic (As)
Purity
- 99.99995% (7N5)
Applications
- GaAs and InAs-based materials
- N-type dopant for germanium and silicon
- P-type dopant in II-VI materials
- Chalcogenide glass
Features
- Consistent vapor pressure and low contamination
- Supplied as lumps, chunks, or ingots pre-loaded crucibles for MBE systems
- Mass volume manufacturer
Boron (B) & Boron Oxide (B₂O₃)
Purity
- 99.999% (5N) and above
Applications
- P-type dopant for silicon semiconductors
- Nuclear reactors
- Encapsulant for crystal growth
Features
- Highly controlled particle size
- Mass volume manufacturer
Beryllium (Be)
Purity
- 99.99% (4N)
Applications
- P-type dopant for III–V
- Commonly used as an acceptor dopant for laser and infrared device fabrication
Features
- Uniform vaporization and low background impurities
- Delivered as pieces for effusion cells
Gallium (Ga) & Gallium Compounds
Purity
- 99.999999% (8N)
Applications
- GaAs, GaN, and GaSb-based-materials
- Wide bandgap Ga2O3
- GaCl3 synthesis
- Used in high-performance lasers, LEDs, and solar cells
Available Forms
- Metallic gallium (liquid)
- Gallium oxide (Ga₂O₃)
- Gallium telluride (Ga₂Te₃)
- We can offer polycrystal GaAs to be used for single crystal growth
Features
- Low oxygen content
- Excellent uniformity for epitaxial growth
- Mass volume manufacturer
Red Phosphorus (P)
Purity
- 99.9999% (6N)
Applications
- Source material for indium phosphide (InP) and gallium phosphide (GaP) semiconductors
- N-type dopant
Features
- High purity and stable vapor delivery
- Convenient small pieces to maximize the charge in a crucible
- Mass volume manufacturer
Indium (In) and Indium Compounds
Purity
- 99.999995% (7N5)
Applications
- Group-III source for MBE crystal growth of InP, InGaAs, and InSb
- InP and InSb bulk crystal growth
- Doping source and raw material for ITO target production
- N-type dopant for II-VI materials
Available Forms
- Metallic indium (shots, ingots)
- Indium trichloride (InCl₃)
- InP and InSb poly-crystalline materials
Features
- Ultra-low oxygen and carbon contamination
- Stable under extended operation
- Mass volume manufacturer
Antimony (Sb)
Purity
- 99.999995% (7N5)
Applications
- Source material for III–V compound semiconductors such as GaSb and InSb
- Used in infrared materials and as a dopant for N-type silicon single crystals
- Source material for bulk crystal growth of InSb and GaSb
Features
- Vertically integrated for antimonide-based materials
Cadmium (Cd), CdTe and CdZnTe
Purity
- 99.99999% (7N)
Applications
- Source material for II–VI compound semiconductors such as CdTe, CdZnTe and HgCdTe
- Source material for bulk crystal growth of CdTe and CdZnTe
- IR substrates, radiation detectors, modulators
Features
- Vertically integrated for IR and radiation detectors
- Mass volume manufacturer
Zinc (Zn) and CdZnTe
Purity
- 99.99999% (7N)
Applications
- Source material for II–VI compound semiconductors such as ZnTe, CdZnTe
- Source material for bulk crystal growth and CdZnTe
- IR substrates and radiation detectors
Features
- Vertically integrated for IR and radiation detectors
Tellurium (Te), ZnTe and CdZnTe
Purity
- 99.99999% (7N)
Applications
- Source material for II–VI compound semiconductors such as CdTe, CdZnTe
- Source material for bulk crystal growth and CdTe, ZnTe and CdZnTe
- IR substrates, radiation detectors and modulators
- N-type dopant for III-V semiconductors
Features
- Vertically integrated for IR and radiation detectors
- Mass volume manufacturer
Quality & Control
Vital Materials’ MBE-grade metals are refined using zone-melting, distillation, and chemical vapor purification techniques to achieve ultra-high purity. Every batch is analyzed with ICP-MS, GDMS, and residual gas analysis (RGA) to ensure trace impurity levels below industry standards.
Products are packaged under inert atmosphere in vacuum-sealed containers to maintain integrity during transport and storage. Certificates of Analysis (COA) are provided with each shipment.
Sustainability & Safety
All MBE source materials are produced in accordance with ISO 9001 and ISO 14001 standards. Vital Materials employs advanced recovery and recycling systems for metals and by-products, supporting circular manufacturing and environmental stewardship throughout the semiconductor supply chain.
Why Vital Materials
- Highest-purity available for epitaxial applications
- Vertical integration from low purity metals to in-house epitaxy services
- Consistent supply and technical support for global MBE users
- Custom compositions and tailored packaging available
- Proven reliability in semiconductor, optoelectronic, and photovoltaic industries