Metal Organic Sources
Vital Materials supplies a full portfolio of high-purity metal-organic precursors used across the compound semiconductor, LED, power electronics, and photonics industries. These materials support MOCVD, ALD, and CVD processes for III–V, II–VI, and other advanced semiconductor applications.
Our MO precursors are manufactured with strict purity control, ensuring consistent vaporization behavior, stable delivery, and reliable performance in high-volume epitaxy environments.
Trimethylaluminum (TMAl)
Chemical Formula
- Al(CH₃)₃
Purity
- 99.9999% (6N)
Applications
- A key precursor for ALD/CVD/MOCVD processes used to deposit aluminum-containing films such as AlN, Al₂O₃, and high-k dielectrics. TMAl is widely used in LEDs, power devices, semiconductor passivation layers, and as a catalyst in organic synthesis.
Features
- High thermal stability and predictable vapor pressure
- Excellent compatibility with modern ALD/MOCVD systems
- Suitable for high-uniformity film deposition
Trimethylgallium (TMGa)
Chemical Formula
- Ga(CH₃)₃
Purity
- 99.9999% (6N)
Applications
- Used as a gallium precursor in MOCVD/CVD for the growth of GaN, GaAs, GaInN, GaInAs, and other III–V semiconductor materials. Essential for high-brightness LEDs, laser diodes, microLEDs, and high-power/high-frequency GaN devices.
Features
- Stable delivery for uniform epitaxy
- Suitable for high-volume LED and power device manufacturing
- Highly controlled impurity profile for optoelectronic applications
Triethylgallium (TEGa)
Chemical Formula
- Ga(C₂H₅)₃
Purity
- 99.999% (5N)
Applications
- Serves as a gallium precursor for MOCVD and Chemical Beam Epitaxy (CBE). Enables growth of optoelectronic materials, mid-IR devices, and Ga-containing III–V thin films.
Features
- Lower vapor pressure alternative to TMGa
- Ideal for select epitaxy conditions requiring tailored volatility
- Excellent film uniformity
Trimethylindium (TMIn)
Chemical Formula
- In(CH₃)₃
Purity
- 99.999% (5N)
Applications
- Used for the MOCVD growth of In-containing films including InN, InP, InGaN, InGaAs, and quantum well structures. Common in lasers, infrared devices, and high-performance LEDs.
Features
- Consistent vapor behavior for precise composition control
- Suitable for In-rich epitaxy requiring low-temperature reactivity
- High-purity grade supports optoelectronic device requirements
Bis(Methylcyclopentadienyl) Magnesium (MeCp₂Mg)
Chemical Formula
- C₁₁H₁₆Mg
Purity
- 99.999% (5N)
Applications
- A widely used p-type dopant precursor for the growth of GaN, AlGaN, and related III–V materials in LED and power electronics manufacturing.
Features
- Stable performance across broad temperature ranges
- Consistent vapor delivery for high-uniformity doping
- Preferred magnesium dopant source for MOCVD
Magnesium Bis(Cyclopentadienyl)
Chemical Formula
- Mg(C₅H₅)₂
Purity
- 99.999% (5N)
Applications
- Used as a doping reagent for LED phosphors, as well as in organometallic synthesis and advanced semiconductor material development.
Features
- Reliable vapor delivery
- Suitable for specialty doping applications
Gallium Trichloride (GaCl₃)
Purity
- 99.999% (5N)
Applications
- Serves as a gallium source for semiconductor materials, organometallic synthesis, and select solar cell processes. Used as a catalyst in organic reactions and as a precursor to certain gallium-based compounds.
Features
- High purity for sensitive chemical processes
- Stable, consistent reactivity in synthesis environments