Precursors
Precursors are intermediate compounds used in the synthesis or preparation of advanced materials. In the semiconductor manufacturing process, they serve as key source materials for forming thin films and functional coatings during vapor deposition processes such as CVD, ALD, and PVD.
Vital Materials provides a wide portfolio of high-purity precursors for thin film deposition, epitaxial growth, etching, doping, and cleaning. Our products are designed to deliver superior thermal stability, controlled volatility, and consistent film composition, supporting applications in logic and memory devices, power semiconductors, LEDs, and photovoltaics.
Key Products
Molybdenum Dioxide Dichloride (MoO₂Cl₂)
Purity
- 99.999% (5N)
Applications
- Used as a key coating precursor for depositing molybdenum-based thin films in microelectronics and optical coatings.
Features
- Excellent film uniformity and adhesion
- Stable vapor delivery
- Suitable for ALD and CVD applications
Hafnium Tetrachloride (HfCl₄)
Purity
- 99.9999% (6N) and 99.999% (5N) grades available
Applications
- High-k dielectric film precursor in ALD/CVD processes for advanced integrated circuits
- Raw material for organohafnium catalyst synthesis
Features
- Controlled particle size and low moisture sensitivity
- Enables HfO₂ and HfSiO thin film formation with excellent dielectric properties
Bis(diethylamino)silane (BDEAS)
Chemical Formula
- SiH₂[N(C₂H₅)₂]₂
Purity
- 99.999% (5N) and 99.9999% (6N)
Applications
- Precursor for silicon-based thin film deposition via ALD or CVD
- Used for conformal SiNₓ and SiO₂ film growth in semiconductor and display manufacturing
Features
- Excellent thermal stability and reactivity
- Reduced carbon contamination
Tetrakis(methylethylamino)hafnium (TEMAH)
Purity
- 99.999% (5N)
Applications
- ALD and CVD precursor for hafnium-containing dielectric films
- Catalyst synthesis for organometallic hafnium compounds
Features
- Smooth film morphology and low defect density
- Ideal for HfO₂ high-k layer formation in logic and DRAM devices
Tetrakis(methylethylamino)zirconium (TEMAZ)
Purity
- 99.999% (5N)
Applications
- ALD and CVD precursor for zirconium-based thin films
- Catalyst precursor for organozirconium materials
Features
- Uniform deposition and precise film thickness control
- High volatility and minimal residue formation
Tetraethyl Orthosilicate (TEOS)
Chemical Formula
- Si(OC₂H₅)₄
Purity
- 99.999% (5N)
Applications
- Widely used precursor for SiO₂ film formation in CVD and ALD
- Applied in semiconductor passivation and interlayer dielectric deposition
Features
- Stable vapor pressure and controlled reactivity
- Produces dense, high-quality oxide layers
Molybdenum Pentachloride (MoCl₅)
Purity
- 99.999% (5N)
Applications
- Used as a chlorination catalyst and in the synthesis of molybdenum hexacarbonyl and other organometallic compounds
Features
- High chemical activity
- Suitable for catalyst and thin film precursor manufacturing
Tetramethylsilane (4MS)
Chemical Formula
- Si(CH₃)₄Purity: 99.999% (5N)
Applications
- ALD/CVD precursor for silicon thin films
- Used as a reagent in analytical chemistry and as a calibration standard in NMR spectroscopy
Features
- High volatility and low reactivity at ambient temperature
- Excellent process compatibility for silicon film formation
Mao-Hafnium Precursor (Mao-Haf)
Type
- Advanced organohafnium precursor (proprietary formula)
Applications
- Designed for next-generation high-k gate dielectric and metal-oxide film deposition
- Optimized for ALD processes in semiconductor and display manufacturing
Features
- High volatility with precise delivery control
- Enhanced film uniformity and interface smoothness
- Stable at low temperature with extended shelf life
Ethyl Zinc Isopropoxide (EtZnOiPr)
Purity
- 99.999% (5N)
Applications
- Zinc source for CVD and ALD processes in optoelectronics and semiconductor fabrication
- Intermediate for organozinc synthesis
Features
- Highly reactive yet controllable vapor behavior
- Produces uniform ZnO films with excellent electrical properties
Applications
- ALD/CVD/PVD thin film deposition
- Epitaxial layer growth for semiconductor wafers
- Doping and ion implantation processes
- Oxide and nitride dielectric layer formation
- High-k gate dielectric manufacturing
- Advanced display and photovoltaic coatings
Quality & Safety
All Vital Materials precursors are synthesized and purified under controlled environments to ensure ultra-high purity and stable vapor performance. Each product is shipped in inert gas–filled containers with moisture and oxygen monitoring.
Production facilities are certified under ISO 9001 and ISO 14001, ensuring full traceability, consistent quality, and environmental responsibility. Each shipment includes a Certificate of Analysis (COA) and Material Safety Data Sheet (MSDS).
Sustainability Commitment
Vital Materials
Vital Materials emphasizes responsible production and handling of all precursor materials. Through advanced purification systems, waste gas capture, and by-product recovery, we ensure environmental protection and circular resource utilization.
Our global operations follow ESG principles, prioritizing safety, sustainability, and transparency across the semiconductor supply chain.
