Indium Phosphide
As AI infrastructure and high-speed networks drive demand for greater bandwidth, reliable access to indium phosphide is becoming increasingly critical. Vital Materials connects capabilities across InP materials, substrates, epitaxy, photonic devices, and optical connectivity to support scalable production for 1.6T and next-generation architectures.
Available InP Substrates
Semi-Insulating InP
- Dopant: Iron (Fe)
- Available Diameters: 2, 3, and 4 inches
- Growth Method: VGF
- Resistivity: ≥0.5 × 10⁷ Ω·cm
- EPD: ≤5,000/cm²
N-Type InP
- Dopant: Sulfur or tin (S or Sn)
- Available Diameters: 2, 3, 4, and 6 inches
- Growth Method: VGF
- Carrier Concentration: 0.8 to 8 × 10¹⁸ cm⁻³
- EPD: ≤5,000/cm²
Undoped N-Type InP
- Dopant: Undoped
- Available Diameters: 2, 3, and 4 inches
- Growth Method: VGF
- Mobility: 3,000 to 5,000 cm²/V·s
- EPD: ≤5,000/cm²
P-Type InP
- Dopant: Zinc (Zn)
- Available Diameters: 2, 3, and 4 inches
- Growth Method: VGF
- Carrier Concentration: 0.8 to 8 × 10¹⁸/cm³
- EPD: ≤5,000/cm²
Indium Phosphide Applications
Optical Communications
InP enables efficient light generation and detection for high-speed optical networks.
Typical Applications
- DFB and EML lasers
- PIN and APD photodetectors
- High-speed optical modules
- Long-haul and metro networks
AI Data Centers and CPO
InP photonic devices deliver the speed and optical performance required for next-generation data-center connectivity.
Typical Applications
- 800G, 1.6T, and future architectures
- AI cluster interconnects
- Co-packaged optics
- Near-packaged optics
- Continuous-wave laser sources
RF, Microwave, and Wireless
High electron mobility makes InP well suited for demanding high-frequency and low-noise electronic devices.
Typical Applications
- HEMTs and HBTs
- MMICs and RFICs
- Satellite communications
- Radar systems
- 5G and WLAN networks
Quality and Manufacturing Control
Vital Materials
Vital Materials manufactures InP substrates using controlled crystal-growth, wafer-processing, and inspection processes designed to support consistent electrical and mechanical performance. Available configurations include semi-insulating and semiconducting substrates, epi-ready surfaces, and customized wafer orientations and thicknesses.
Substrates are evaluated for key parameters including carrier concentration, resistivity, mobility, etch pit density, total thickness variation, warp, and surface condition.
Why Vital Materials
- Integrated capabilities spanning high-purity indium, InP substrates, epitaxy, photonic devices, and optical connectivity
- VGF-grown InP substrates available in sizes from 2 to 6 inches
- Semi-insulating, n-type, undoped n-type, and p-type configurations
- Epi-ready surfaces with customized thicknesses and wafer orientations
- Controlled manufacturing and inspection focused on low defect density and consistent wafer performance
- Technical support from substrate selection and qualification through production scale-up