Germanium (Ge) Substrates
Vital manufactures Low EPD (etch pit density) or even Zero EPD Ge substrates, supplied in diameters from 2" up to 6" with a Resistivity from 0.005 Ω·cm to over 50Ω·cm. Monocrystalline Ge wafers are an important semiconductor substrate material. High quality substrates are used in Concentrator Photovoltaic power stations (CPV), outer-space solar cell panels and ultra-high brightness LEDs.
Market and application
Germanium single crystal wafers are an important semiconductor substrate material. These high-quality substrates are primarily used in CPV, outer-space solar-cell panel and high-bright light-emitting diode applications.
Custom-made Ge substrates configurations are available upon request.
Item |
Unit |
Semiconduct Specifications |
Crystal Growth Method |
|
CZ |
Conduct Type |
|
(n-type) |
(p-type) |
Dopant |
|
As,Sb |
Ga |
Diameter |
inch |
2",3",4" and 6" |
Wafer Orientation |
|
(100)±0.5° |
OF/IF |
|
US,EJ |
Laser Marking |
/cm3 |
Upon request |
Thickness |
μm |
(175-500)±25 |
Resistivity (at RT) |
ohm.cm |
0.005-30 |
0.005-0.04 |
Etch Pit Density (EPD) |
/cm2 |
- |
0 |
TTV |
μm |
≤15 |
≤15 |
Warp |
μm |
≤25 |
≤25 |
Backside Ra |
μm |
<0.1 |
<0.1 |
Surface |
Side1/Side2 |
E/E, P/E, P/D |
Epi-ready |
|
Yes |
Package |
|
Cassette or single wafer container |