Indium Phosphide
Product PDFIndium Phosphide (InP) Substrates
Vital supplies high quality Indium Phosphide (InP) wafers, from 2â€to 4†in diameter for telecommunications and microelectronics applications. InP wafer are provided un-doped, Fe-doped, S-doped , and Zn-doped.
Market and Application
InP is an important III-V compound and semiconductor material with advantages of high electron mobility, good radiation stability, and large band gap. Indium Phosphide has particular advantage in two applications:
- Photonics: Emission and detection capacities with more than 1,000nm wave length
- RF: High-speed and low noise performance in high frequency RF applications. InP is the first choice for performance-driven niche markets in communication, radar, test equipment, and radiation measurement.
| Item | Unit | Semi-insulating Specifications | Semi-conduct Specifications |
|---|---|---|---|
| Conduct Type | n-type/p-type | ||
| Crystal Growth Method | VGF | VGF | |
| Dopant | Fe | S,Sn/Undoped/Zn | |
| Diameter | inch | 2",3",4" | 2",3",4" |
| Wafer Orientation* | (100)±0.5° | (100)±0.5° | |
| OF/IF | US,EJ | US,EJ | |
| Resistivity (at RT) | ohm.cm | ≥0.5x107 | |
| Carrier Concentration | cm-3 | N/A | (0.8-8)x1018/(1-10)x1015/(0.8-8)x1018 |
| Mobility | cm2/v.s | ≥1000 | 1000-2500/3000-5000/50-100 |
| Etch Pit Density (EPD) | /cm2 | 1500-5000 | 100-5000/≥5000/≥500 |
| Laser Marking | Upon request | Upon request | |
| Thickness* | μm | (350-675)±25 | (350-675)±25 |
| TTV (P/P) | μm | ≤10 | ≤10 |
| TTV (P/E) | μm | ≤15 | ≤15 |
| Warp | μm | ≤15 | ≤15 |
| Surface | Sides 1 & 2 | Polished/Etched | Polished/Etched |
| Epi-ready | Yes | Yes | |
| Package | Cassette or single wafer container | Cassette or single wafer container |